BAV100, bav101, bav102, bav103 www.vishay.com vishay semiconductors rev. 1.7, 31-jul-12 1 document number: 85542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diodes, high voltage mechanical data case: minimelf sod-80 weight: approx. 31 mg cathode band color: black packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/2.5k per 7" reel (8 mm tape), 12.5k/box features ? silicon epitaxial planar diode ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? general purposes parts table part type differentiation ordering code type marking internal construction remarks BAV100 v rrm = 60 v BAV100-gs18 or BAV100-gs08 - single diode tape and reel bav101 v rrm = 120 v bav101-gs18 or bav101-gs08 - single diode tape and reel bav102 v rrm = 200 v bav102-gs18 or bav102-gs08 - single diode tape and reel bav103 v rrm = 250 v bav103-gs18 or bav103-gs08 - single diode tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit repetitive peak reverse voltage BAV100 v rrm 60 v bav101 v rrm 120 v bav102 v rrm 200 v bav103 v rrm 250 v reverse voltage BAV100 v r 50 v bav101 v r 100 v bav102 v r 150 v bav103 v r 200 v peak forward surge current t p = 1 s i fsm 1a repetitive peak forward current i frm 625 ma forward continuous current i f 250 ma power dissipation p tot 500 mw
BAV100, bav101, bav102, bav103 www.vishay.com vishay semiconductors rev. 1.7, 31-jul-12 2 document number: 85542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to lead r thjl 350 k/w thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c electrical parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 50 v BAV100 i r 100 na v r = 100 v bav101 i r 100 na v r = 150 v bav102 i r 100 na v r = 200 v bav103 i r 100 na t j = 100 c, v r = 50 v BAV100 i r 15 a t j = 100 c, v r = 100 v bav101 i r 15 a t j = 100 c, v r = 150 v bav102 i r 15 a t j = 100 c, v r = 200 v bav103 i r 15 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms BAV100 v (br) 60 v i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav101 v (br) 120 v i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav102 v (br) 200 v bav103 v (br) 250 v diode capacitance v r = 0 v, f = 1 mhz, v hf = 50 mv c d 1.5 pf differential forward current i f = 10 ma r f 5 ? reverse recovery time i f = i r = 30 ma, i r = 3 ma, r l = 100 ? t rr 50 ns 0 40 80 120 160 0.01 0.1 1 10 1000 i-re v erse c u rrent (a) r t j -j u nction temperat u re (c) 200 94 9084 100 scattering limit v r = v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f -for w ard v oltage ( v ) 2.0 94 9085 scattering limit t j = 25 c
BAV100, bav101, bav102, bav103 www.vishay.com vishay semiconductors rev. 1.7, 31-jul-12 3 document number: 85542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - differential forward resistance vs. forward current package dimensions in millimeters (inches): minimelf sod-80 0.1 1 10 1 10 100 1000 r - differential for w ard resistance ( ) f i f - for w ard c u rrent (ma) 100 94 9089 t j = 25 c cathode indification 0.47 (0.019) max. 2.5 (0.098) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. 2 (0.079) min. 1.6 (0.063) 1.4 (0.055) foot print recommendation: * * the gap bet w een pl u g and glass can be either on cathode or anode side doc u ment no.:6.560-5005.01-4 re v . 8 - date: 07.j u ne.2006 96 12070
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